1310 nm Pulse Laser Diode, InGaAs Strained, 150 mW Peak Power PM DWDM or directly modulated for signal

or directly modulated for signal transmission

Optical Communication Transceivers

which achieves low insertion loss and highly repeatability by rotating the mirror of MEMS chip

6 nm Channel Spacing

That reduces packaging requirement

1310 nm Pulse Laser Diode, InGaAs Strained, 150 mW Peak Power PM DWDM or directly modulated for signalThe LD 1310P DL is a high power pulse laser diode that has been designed as a light laser source for pulsed fiber lasers. It can be used for Optical Time Domain Reflectometer (OTDR) and other pulse application. It feature high peak power and excellent reliability. Housed inside a dual Inline package, LD 1310P DL is extremely compact. FEATURES Wavelength Range: 131010 nm Built in Isolator Multi Mode Fabry Perot High Peak Output Power 100 mW @ 400 mA